Device self-alignment by propagation of a reference structure's

Details Device self-alignment by propagation of a reference structure's Device self-alignment by propagation of a reference structure's

1992-08-28

1994-08-23

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 44, 437101, H01L 21336, H01L 2128

Patent

active

053407580

ABSTRACT:
A self-aligned, inverted, thin film field effect transistor is produced by patterning the gate electrode to have tapered edges followed by conformal deposition of subsequent layers of the device structure up through a support layer followed by deposition of a subordinate layer such as the source/drain metallization) on the support layer. The subordinate layer itself may be a planarization or non-conformal layer or may have a subsequent non-conformal planarization layer disposed thereon. Thereafter, the structure is non-selectively etched (preferably reactive ion etched) until the support layer is exposed by the creation of an aperture in the subordinate layer in alignment with raised portions of the reference layer while leaving the subordinate layer present on other parts of the structure. Thereafter, the remainder of the device is fabricated with the source and drain electrodes self-aligned with respect to the gate conductor using a selective etch method.

REFERENCES:
patent: 4633284 (1986-12-01), Hansell et al.
patent: 4686553 (1987-08-01), Possin
patent: 4715930 (1987-12-01), Diem
patent: 4778773 (1988-10-01), Sukegawa
patent: 4862234 (1989-08-01), Koden
patent: 5010027 (1991-04-01), Possin et al.
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5032883 (1991-07-01), Wakai et al.
patent: 5156986 (1992-10-01), Wei et al.
Norbert Marschall, "thin-Film Silicon Transistors for Driving Liquid-Crystal Displays," Technische Rundschau 50/86, pp. 76-81.
Kim et al., "Amorphous Silicon Thin-Film Transistors With Two-Layer Gate Insulator," Appl. Phys. Lett. 54(21), May 1989, pp. 2079-2081.
T. Kodama et al., "A self-Alignment Process for Amorphous Silicon Thin Films Transistors", IEEE Electron Device Letters, vol. EDL-3, Jul. 1982, pp. 187-189.

Affiliated with

Also associated with

Rating

Device self-alignment by propagation of a reference structure's does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device self-alignment by propagation of a reference structure's , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device self-alignment by propagation of a reference structure's will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-502598