Method and apparatus for optically detecting surface states in m

Optics: measuring and testing – Of light reflection

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356432, G01N 2141

Patent

active

047508221

ABSTRACT:
A method and apparatus is disclosed for detecting defect surface states in any material and in particular semiconductors. In the subject device, a periodic localized excitation is generated at the surface of the sample with an intensity modulated pump laser beam. A probe laser beam is directed to the surface of the sample and changes in the probe beam which are in phase with the modulated pump frequency are detected. In the preferred embodiment, periodic changes in the optical reflectivity of the surface of the sample induced by an intensity modulated excitation beam are detected by measuring the corresponding modulations in the reflected power of the probe beam. Any time dependence of the probe beam modulated reflectance signal is monitored. An evaluation of defect surface states is then made by investigating the time dependence of the magnitude and/or phase of this probe beam modulated reflectance signal.

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Liu et al., "Picosecond Time-Resolved Plasma and Temperature-Induced Changes of Reflectivity and Transmission in Silicon", Appl. Phys. Lett 41(7), 1 Oct. 1982.

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