Method of pretreating the deposition chamber and/or the substrat

Details Method of pretreating the deposition chamber and/or the substrat Method of pretreating the deposition chamber and/or the substrat

1993-08-26

1995-07-11

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427569, 427576, 427250, 427253, B05D 306, C23C 1600

Patent

active

054319641

ABSTRACT:
The invention relates to the method of pretreating a deposition chamber intended to be used for the selective vapor deposition of tungsten, characterized in that a plasma of fluorine-containing gas, optionally combined with an inert diluting gas, is induced in the said deposition chamber.
Advantageously, the same fluorine treatment is applied to the substrate intended to receive the selective tungsten deposition.

REFERENCES:
patent: 4613400 (1986-09-01), Tam et al.
patent: 4816294 (1989-03-01), Tsuo et al.
patent: 4969415 (1990-11-01), Bartha et al.
patent: 4980197 (1990-12-01), Suhr et al.
patent: 5108543 (1992-04-01), Suzuki et al.
patent: 5207836 (1993-05-01), Chang
Proc. 6th International IEEE VLSI Multilevel Interconnection Conference, Jun. 12, 1989, Santa Clara, USA, pp. 151-157, Osamu Yamazaki, et al., "Selective CVD Tungsten Contact Plug Technology with Plasma Pre-Treatment".

Affiliated with

Also associated with

Rating

Method of pretreating the deposition chamber and/or the substrat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of pretreating the deposition chamber and/or the substrat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of pretreating the deposition chamber and/or the substrat will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-502083