Semiconductor memory device with capacitor over non-volatile mem

Details Semiconductor memory device with capacitor over non-volatile mem Semiconductor memory device with capacitor over non-volatile mem

1990-02-20

1991-11-05

Jackson, Jr., Jerome

357 235, 357 51, 357 71, H01L 2978, H01L 2944

Patent

active

050634259

ABSTRACT:
An improved semiconductor memory device combining a volatile semiconductor storage with a nonvolatile semiconductor storage is disclosed. A capacitor for storing data in the volatile semiconductor storage is formed in a stack structure having a accumulation node polysilicon layer held in ohmic contact with the drain area of the nonvolatile semiconductor storage, an insulation film and a capacitor gate sequentially laminated one over the other on the nonvolatile semiconductor storage. The memory cell size can be minimized for high density applications thereof, with a longer data retention time achieved in the volatile semiconductor storage.

REFERENCES:
patent: 4419743 (1983-12-01), Taguchi
patent: 4897700 (1990-01-01), Nakamura
Copy of "A Novel NVRAM Cell Technology for High Density Applications", published in Dec. of 1988, IEDM, San Fran., Calif., pp. 416-419.

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