Silicon carbide light emitting diode having a pn junction

Details Silicon carbide light emitting diode having a pn junction Silicon carbide light emitting diode having a pn junction

1989-08-07

1991-11-05

LaRoche, Eugene R.

357 4, 357 6, H01L 3300

Patent

active

050634216

ABSTRACT:
A silicon carbide light emitting diode having a pn junction is disclosed which comprises a semiconductor substrate, a first silicon carbide single-crystal layer of one conductivity formed on the substrate, and a second silicon carbide single-crystal layer of the opposite conductivity formed on the first silicon carbide layer, the first and second silicon carbide layers constituting the pn junction, wherein at least one of the first and second silicon carbide layers contains a tetravalent transition element as a luminescent center.

REFERENCES:
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patent: 3975661 (1976-08-01), Kanatani et al.
patent: 4152711 (1979-05-01), Nakata
patent: 4613546 (1986-09-01), Kuwata et al.
patent: 4613793 (1986-09-01), Panicker et al.
patent: 4736229 (1988-04-01), Holmberg et al.
J. Appl. Phys., 53 (10), Oct. 1982, pp. 6962-6967.
J. Appl. Phys., vol. 50(12), Dec. 1979, pp. 8215-8225, Hoffmann et al.
Elektor, Mar. 1982, pp. 3-36 through 3-41.

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