Radiation-hardened semiconductor device with surface layer

Details Radiation-hardened semiconductor device with surface layer Radiation-hardened semiconductor device with surface layer

1987-07-13

1991-03-05

Mintel, William

357 35, 357 52, 357 91, H01L 2972

Patent

active

049981552

ABSTRACT:
A radiation-hardened semiconductor device including a bipolar transistor is disclosed in which a highly-doped layer equal in conductivity type to and larger in impurity concentration than the base region of the transistor is formed in that portion of the surface of the base region which exists beneath an insulating film, to prevent minority carriers injected into the base region, from reaching the above-mentioned surface portion. Thus, the injected minority carriers can reach a collector region without being extinguished by the recombination at the surface of the base region.

REFERENCES:
patent: 3868720 (1975-02-01), New et al.
patent: 4047217 (1977-09-01), McCaffrey et al.
patent: 4066473 (1978-01-01), O'Brien
patent: 4165516 (1979-08-01), Smulders
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4660065 (1987-04-01), Carvajal et al.
Bhattacharyya et al., "Dual Base Lateral Bipolar Transistor", IBM Technical isclosure Bulletin, vol. 20, No. 4, Sep. 1977, pp. 1313-1314.

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