1990-01-18
1991-03-05
Jackson, Jr., Jerome
357 4, 357 16, 357 22, H01L 3108, H01L 29205
Patent
active
049981544
ABSTRACT:
A Metal-Semiconductor-Metal (MSM) photodetector comprises a semiconductor substrate, a semiconductor barrier layer on the substrate, a thin semiconductor active layer on the barrier layer, and at least two electrical contacts to the active layer. The barrier layer prevents carriers generated deep in the substrate from reaching the contacts. As it is the delayed detection of these carriers which limits the useful operating speed or bandwidth of conventional MSM photodetectors, the MSM photodetector according to the invention is capable of higher speed operation than conventional MSM photodetectors.
REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4593304 (1986-06-01), Slayman et al.
patent: 4673959 (1987-06-01), Shiraki et al.
patent: 4706103 (1987-11-01), Ranganath
Surridge Robert K.
Xu Jingming
Jackson, Jr. Jerome
Junkin C. W.
Northern Telecom Limited
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