Method of making a diffusionless virtual drain and source conduc

Details Method of making a diffusionless virtual drain and source conduc Method of making a diffusionless virtual drain and source conduc

1990-04-06

1991-11-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 50, 437913, H01L 21265

Patent

active

050631713

ABSTRACT:
A diffusionless field effect transistor is formed at a face of a semiconductor layer (12) of a first conductivity type and includes a source conductor (36), a drain conductor (38) and a channel region (44). Source conductor (36) and drain conductor (38) are disposed to create inversion regions, of a second conductivity type opposite said first conductivity type, in the underlying source inversion region (40) and drain inversion region (42) of semiconductor layer (12) upon application of voltage. The transistor has a gate (54) insulatively overlying the channel region (44) to control the conductivity thereof.

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