Method of producing a bipolar transistor with spacers

Details Method of producing a bipolar transistor with spacers Method of producing a bipolar transistor with spacers

1990-08-28

1991-11-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437947, 437133, 748DIG111, H01L 21331

Patent

active

050631675

ABSTRACT:
A method of producing a semiconductor device includes providing a collector layer comprising a first conductivity type semiconductor layer, a base layer comprising a second conductivity type semiconductor layer produced on the collector layer, an emitter layer comprising a first conductivity type semiconductor layer produced on the base layer, a contact layer comprising an undoped semiconductor layer produced on the emitter layer, second conductivity type first implantation regions produced at regions each consisting of the contact layer, the emitter layer, and the base layer, so as to leave a central region therebetween, base electrodes produced on the first implantation regions, a first conductivity type second implantation region produced by implanting impurities from the surface of the contact layer extending into the emitter layer, in a region between the first implantation regions, and an emitter electrode produced on the second implantation region. Also, a method of producing a semiconductor device includes providing an emitter layer comprising undoped semiconductor layer and a first conductivity type second implantation region produced by implanting impurities from the surface of the undoped semiconductor layer extending into the base layer, at a region between the first implantation regions.

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Morizuka et al., "Self-Aligned AlGaAs/GaAs . . . Double Implantation", 18th Conference on Solid State Devices and Materials, 1986, pp. 359-362.

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