Fishing – trapping – and vermin destroying
Patent
1989-09-25
1991-03-05
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 52, 357 236, H01L 21266
Patent
active
049977741
ABSTRACT:
This invention is related to a method for fabricating a DRAM cell. This invention makes the capacitor electrode and the source of the transistor connect more easily using the lateral diffusion of another dopant having higher diffusivity and same impurity type, which is added to the first ion implantation for the first electrode of storage capacitor. According to this invention the storage capacitor electrode and the source of the transistor are connected successfully, and it is possible to reduce the resistance between the capacitor electrode and the drain of the transistor.
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Selective Node Dielectric Thinning of Semiconductor Dynamic Memory, IBM Tech. Disc. Bull., vol. 30, No. 3 (Aug., 1987), pp. 1294-1296.
Chaudhuri Olik
Fourson George R.
Samsung Semiconductor and Telecommunications Co. Ltd.
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