Vertical MOSFET having voltage regulator diode at shallower subs

Details Vertical MOSFET having voltage regulator diode at shallower subs Vertical MOSFET having voltage regulator diode at shallower subs

1988-04-25

1990-06-05

James, Andrew J.

357 239, 357 2313, 357 13, 357 48, H01L 2700

Patent

active

049318462

ABSTRACT:
A vertical MOSFET device has a first conductivity type substrate layer serving as a drain, a second conductivity type channel region extending into said substrate layer from a top surface, and a first conductivity type source region extending into the channel region from the top surface. The channel region has a peripheral subregion extending deeply into the substrate layer from the top surface under an insulated gate electrode, and a shallow central subregion shallower than the peripheral subregion. There is further provided a second conductivity type underlying layer formed under the shallow central subregion so as to form a voltage regulating diode with the channel region at a position shallower than the bottom of the peripheral subregion.

REFERENCES:
patent: 4686551 (1987-08-01), Mihara
RCA Technical Note No. 1343, Dated Mar. 14, 1984, Avalanche Diode Structure.

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