Semiconductor memory device having an ohmic contact between an a

Details Semiconductor memory device having an ohmic contact between an a Semiconductor memory device having an ohmic contact between an a

1988-10-31

1990-06-05

Hille, Rolf

357 59, 357 236, 357 41, H01L 2348, H01L 2904, H01L 2978, H01L 2702

Patent

active

049318454

ABSTRACT:
A semiconductor memory device includes a memory cell portion and a peripheral circuit portion which are provided on a silicon substrate. The peripheral circuit portion includes an insulation film having a contact hole formed on the silicon substrate, a barrier layer formed in the contact hole having a layer structure which is the same as that of a metallization film provided in the memory cell portion and which is formed at the same time as forming the first metallization film. The above layer structure includes a polysilicon film and a metal silicide film. A metallization film of an alloy of aluminum and silicon overlies the barrier layer in the contact hole.

REFERENCES:
patent: 4042953 (1977-08-01), Hall
patent: 4569122 (1986-02-01), Chan
patent: 4604641 (1986-08-01), Konishi
patent: 4845544 (1989-07-01), Shimizu

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