Semiconductor switch having sensitive gate characteristics at hi

Details Semiconductor switch having sensitive gate characteristics at hi Semiconductor switch having sensitive gate characteristics at hi

1977-02-09

1977-12-13

Miller, Jr., Stanley D.

357 12, 357 55, 357 86, H01L 2974

Patent

active

040632784

ABSTRACT:
The specification discloses a sensitive gate controlled rectifier including a semiconductor body having four layers of alternating opposite conductivity types. A first highly doped region of a first conductivity type is formed in a first exterior layer of the body of the first conductivity type. A second highly doped region of a second conductivity type is formed in the first exterior layer adjacent the first region. A first electrode electrically connects an internal layer of the second conductivity type with the first exterior layer and the first region to form a cathode. A second electrode connects to the second region to form a gate. A third electrode connects to a second exterior layer of the second conductivity type to form an anode.

REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3391310 (1968-07-01), Gentry
patent: 3489962 (1970-01-01), McIntyre et al.
patent: 3681667 (1972-08-01), Kokosa

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