Integrated circuit device including both N-channel and P-channel

Details Integrated circuit device including both N-channel and P-channel Integrated circuit device including both N-channel and P-channel

1976-12-10

1977-12-13

Wojciechowicz, Edward J.

357 42, 357 52, 357 68, 357 86, 357 89, H01L 2940

Patent

active

040632741

ABSTRACT:
A complementary integrated circuit device, adapted for fabrication with relatively high circuit density, includes relatively fast transistors with a closed gate geometry. Permanently-off gates surround transistors to isolate them from other transistors.

REFERENCES:
patent: 3491273 (1970-01-01), Stiegler
patent: 3763406 (1973-10-01), Bosselaar
patent: 3798512 (1974-03-01), Critchlow et al.
patent: 3845495 (1974-10-01), Cauge et al.
patent: 3911473 (1975-10-01), Nienhuis
L. Rosier, "Surface State and Surface Recombination Velocity Characteristics of Si-SiO.sub.2 Interfaces," IEEE Trans. on Elec. Dev., vol. Ed.-13 No. 12, Feb. 1966, pp. 260-268.

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