ESD protected FAMOS transistor

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific voltage responsive fault sensor

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365228, H02H 320, G11C 1604

Patent

active

052434907

ABSTRACT:
A FAMOS memory bit (40) is protected from voltage spike caused by an electrostatic discharge or otherwise by an ESD protection circuit (12). Responsive to a voltage spike on V.sub.pp, the ESD protection circuit (12) couples the drain of the FAMOS memory bit (40) to V.sub.cc or another high capacitance node.

REFERENCES:
patent: 4385337 (1983-05-01), Asano et al.
patent: 4527213 (1985-07-01), Ariizumi
patent: 4630162 (1986-12-01), Bell et al.
patent: 4692834 (1987-09-01), Iwahashi et al.

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