Pressure sensitive field effect device

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Details

357 23, H01L 2978, H01L 2984

Patent

active

040358224

ABSTRACT:
A pressure sensitive field effect semiconductor device which is one element of an integrated array is disclosed. The device employs a layer of elastomer material located substantially between the gate and the current carrying channel, to effectuate the conversion of a longitudinal pressure variation to an electrical variation. The device may inherently include amplification of the electrical variation. One use for the device is in an acoustic wave detector array.

REFERENCES:
patent: 3436492 (1969-04-01), Reedyk
patent: 3585415 (1971-06-01), Muller et al.
patent: 3978508 (1976-08-01), Vilkomerson

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