Method for manufacturing semiconductor devices having twin wells

Fishing – trapping – and vermin destroying

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437 28, 437 29, 437 34, 437 40, 437 41, 437 45, 437 57, 437228, H01L 21265

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049314068

ABSTRACT:
A method for manufacturing twin well type semi-conductor devices includes the steps of forming a first layer on a P-type silicon substrate, selectively removing part of the first layer to expose a predetermined portion of the surface of the substrate, ion-implanting phosphorus to introduce the phosphorus into the surface area of the substrate under the first layer and into a portion of the substrate deeper than the substrate surface area below the predetermined portion of the substrate surface, ion-implanting boron to introduce the boron into the surface area of the first layer and the surface area under the predetermined portion of the substrate, removing the first layer, and effecting heat treatment to diffuse the introduced phosphorus and boron.

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patent: 4818716 (1989-04-01), Okuyama et al.

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