Structure and method for selectively producing a conductive regi

Details Structure and method for selectively producing a conductive regi Structure and method for selectively producing a conductive regi

1989-11-22

1990-06-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 437192, 437922, 437246, 148DIG55, 148DIG90, 148DIG93, 357 71, H01L 21283

Patent

active

049313533

ABSTRACT:
In a multi-chip module, a structure for selectively connecting two conductors. A switchable connector (36) is disposed between a first and second portion (30,32) of a copper conductor (28). The switchable connector comprises an amorphous silicon layer (58), which extends between two spacer pads (56) that are electrically connected to the first and second portions of the copper conductor. A barrier layer (60) is formed atop the amorphous silicon, physically separating it from a reactive metal layer (62). The reactive metal layer is coated with an antireflective coating (64). Interaction of the reactive metal layer with the amorphous silicon layer is prevented by the barrier layer until the barrier layer is heated above 500.degree. C. A laser beam (66) is focused on opposite edges of the switchable connector, causing the barrier layer and reactive metal layer to diffuse into the amorphous silicon, forming electrically conductive silicides. Electric current can then flow between the first and second portions of the copper conductor through the silicides and the remainder of the reactive metal layer.

REFERENCES:
patent: 4681778 (1987-07-01), Young
patent: 4751197 (1988-06-01), Wills
Song, Jerng-Sik, et al., "Enhanced PtSi formation . . . ", Appl. Phys. Lett. 50(7), 16 Feb. 1987, pp. 422-424.

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