Semiconductor device having miniaturized contact electrode and w

Details Semiconductor device having miniaturized contact electrode and w Semiconductor device having miniaturized contact electrode and w

1992-07-10

1993-09-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257754, 257758, 257760, 257763, 257764, 257774, 257797, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

052432203

ABSTRACT:
A contact hole in a diffusion region is narrowed by a buffer layer formed at about the middle of an interlayer insulating film in its thickness direction. This buffer layer serves as effective alignment tolerances to the diffusion region and a contact electrode at the time of forming the contact hole. The structure having a wiring conductor filled in the contact hole and having the contact electrode formed on this wiring conductor can assure a highly reliable contact. Forming a buffer layer as a sidewall on this contact electrode and a first wiring layer formed on the same layer can assure an effective alignment tolerance to the first wiring layer at the time of forming a VIA hole. Filling a wiring conductor in the VIA hole can eliminate the need for any contact tolerance for a second wiring layer to be formed on this wiring conductor. Accordingly, the individual contact tolerances can be assured by self-alignment.

REFERENCES:
patent: 4641170 (1987-02-01), Ogura et al.
patent: 4866009 (1989-09-01), Matsuda
patent: 4878105 (1989-10-01), Hirakawa et al.
patent: 4962414 (1990-10-01), Liou et al.

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