Phototransistor

Details Phototransistor Phototransistor

1992-02-20

1993-09-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257464, 257 53, H01L 2714, H01L 3100

Patent

active

052432165

ABSTRACT:
A phototransistor includes a monocrystalline semiconductor substrate of a first conductivity type, a crystalline semiconductor layer of a second conductivity type formed from a surface of the semiconductor substrate to a predetermined depth, a substantially intrinsic amorphous semiconductor layer formed on the crystalline semiconductor layer, and an amorphous semiconductor layer of the first conductivity type formed on the intrinsic amorphous semiconductor layer.

REFERENCES:
patent: 4496788 (1985-01-01), Hamakawa et al.
patent: 4498092 (1985-02-01), Yamazaki
patent: 5055141 (1991-10-01), Arya et al.
patent: 5066340 (1991-11-01), Iwamoto et al.

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