Semiconductor device with overvoltage protective function

Details Semiconductor device with overvoltage protective function Semiconductor device with overvoltage protective function

1992-06-18

1993-09-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257617, 257612, 257113, 257107, H01L 2974, H01L 2930, H01L 29167

Patent

active

052432050

ABSTRACT:
In a photothyristor, a main thyristor consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed on a semiconductor substrate. Also a pilot thyristor surrounded with the main thyristor and consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed. In the P gate base layer, a trigger light irradiation surface including the inner surface of a recess is formed on the center of the pilot thyristor. In the N base layer, a crystal defect layer is formed under the trigger light irradiation surface by the irradiation with a radiant ray. A breakdown voltage to protect the thyristor from overvoltage is controlled by the crystal defect layer.

REFERENCES:
patent: 4056408 (1977-11-01), Bartko et al.
patent: 4214254 (1980-07-01), Kimura et al.
patent: 4314266 (1982-02-01), Temple
patent: 4559551 (1985-12-01), Nakagawa
patent: 4646121 (1987-02-01), Ogura
patent: 4754315 (1988-06-01), Fisher et al.
patent: 4929563 (1990-05-01), Tsunoda et al.
patent: 4980741 (1990-12-01), Temple
patent: 5003369 (1991-03-01), Kanda et al.

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