MOS-controlled thyristor MCT

Details MOS-controlled thyristor MCT MOS-controlled thyristor MCT

1992-08-11

1993-09-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257146, 257328, 257337, 257341, H01L 2974, H01L 2910, H01L 2978

Patent

active

052432017

ABSTRACT:
In an MOS-controlled thyristor MCT comprising a multiplicity of adjacently disposed individual MCT cells (MC) having a cell width and which are electrically connected in parallel, either the MCT cells (MC) themselves or cell clusters (15) comprising a few closest-packed MCT cells (MC) are mutually separated by nonemitting gaps (2) which do not inject charge carriers into the cathode base layer and which have lateral linear dimensions greater than or at least equal to the cell width of the MCT cells (MC). As a result of this separation, the full performance of the individual MCT cell (MC) is achieved even in large-area components containing many cells.

REFERENCES:
patent: 4646117 (1987-02-01), Temple
US-Z: Temple, Victor A. K.: "MOS-Controlled Thyristors-A New Class of Power Devices". IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986, pp. 1609-1618.
US-Z: Bauer, F., et al.: "Current-Handling and Switching Performance of MOS-Controlled Thyristor (MCT) Structures". IEEE Electron Devices Lett. vol. 12, No. 6, Jun. 1991, pp. 297-299.

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