Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-06-24
1993-09-07
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257478, 257604, H01L 2990
Patent
active
052431991
ABSTRACT:
Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse bias voltage for amplification or oscillation of high frequency waves. The active semiconductor layers are made of semiconductor diamond. High heat conductivity and high insulation breakdown voltage of diamond heighten the output power of oscillation or amplification.
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Fujimori Naoji
Nishibayashi Yoshiki
Shiomi Hiromu
Crane Sara W.
Sumitomo Electric Industries Ltd.
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