Method of forming a thin film capacitor with a manganese dioxide

Details Method of forming a thin film capacitor with a manganese dioxide Method of forming a thin film capacitor with a manganese dioxide

1976-02-09

1977-12-13

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29 2542, 204192D, 361313, C23C 1500

Patent

active

040627497

ABSTRACT:
A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having an electrically conductive film electrode formed thereon is provided and a layer of manganese dioxide is applied over the conductive film. The composite so formed is disposed within an oxygen-inert gas containing vacuum environment. A film of tantalum oxide is applied over the manganese dioxide layer by r-f sputtering of a tantalum oxide target within the vacuum environment while the dielectric substrate, conductive film, and manganese dioxide layer are being cooled. The composite may then be removed from the oxygen-inert gas containing vacuum environment and a second electrically conductive film electrode applied over the so-formed tantalum oxide film.

REFERENCES:
patent: 3969197 (1976-07-01), Tolar et al.
I. H. Pratt, "Thin-Film Dielectric Properties of RF Sputtered Oxides", Solid State Technology, Dec. 1969, pp. 49-57.

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