Method for the fabrication of MOS devices

Details Method for the fabrication of MOS devices Method for the fabrication of MOS devices

1992-05-22

1993-09-07

Fourson, George

Fishing, trapping, and vermin destroying

437 69, 437 70, H01L 2176

Patent

active

052428494

ABSTRACT:
After the formation of SiO.sub.2 films that are field oxide films and P.sup.+ -type diffusion layers that are stopper channels, the Si.sub.3 N.sub.4 films are subjected to an isotropic etching process, thereby removing the regions adjacent to the edges of the SiO.sub.2 films of the Si.sub.3 N.sub.4 films. By using the Si.sub.3 N.sub.4 and SiO.sub.2 films as a mask, N-type impurities are implanted into the Si substrate adjacent to the edges of the SiO.sub.2 films. Then the P.sup.+ -type diffusion layers disappear adjacent to the edges of the SiO.sub.2 films and the P.sup.+ -type diffusion layers are isolated from the N.sup.+ -type diffusion layers, whereby semiconductor devices that are faster and are highly reliable and dependable in operation can be fabricated.

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