Trench capacitor for large scale integrated memory

Details Trench capacitor for large scale integrated memory Trench capacitor for large scale integrated memory

1990-06-22

1991-12-24

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 236, 437 52, H01L 21283, H01L 2978

Patent

active

050758179

ABSTRACT:
A trench capacitor which has a plurality of capacitor plates separated by a dielectric within a trench on a substrate. A plate located closest to the wall of the trench may be a field shield and tied everywhere to ground. The other plate may be polysilicon. Said other plate may be tied to a source of variable potential. A plurality of sacrificial layers are established over the structure and the structure thus formed is then patterened and etched. A pass transistor is formed adjacent to the trench capacitor, and a connecting layer is established connecting the other plate of the trench capacitor to the source/drain region of the pass transistor. The connecting layer makes electrical contact to the other capacitor plate and source/drain of the pass transistor and is insulated from other layers in the capacitor and pass transistor. Bit lines and word lines can then be added, as known in the art.

REFERENCES:
patent: 4123300 (1978-10-01), Joshi et al.
patent: 4513304 (1985-04-01), Takemae
patent: 4688063 (1987-08-01), Lu et al.
patent: 4704705 (1987-11-01), Womack
patent: 4721987 (1988-01-01), Baglee et al.
patent: 4804636 (1989-02-01), Groover et al.
patent: 4918503 (1990-04-01), Okuyama

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