Method for stripping photolacquers

Details Method for stripping photolacquers Method for stripping photolacquers

1975-11-13

1978-01-24

Bashore, S. Leon

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 38, 252143, 252DIG8, 252364, B08B 308

Patent

active

040702030

ABSTRACT:
Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75.degree. C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150.degree. C.

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patent: 3625763 (1971-12-01), Melillo
patent: 3629004 (1971-12-01), Cooper et al.
patent: 3813309 (1974-05-01), Bakos et al.

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