Process for plasma etching

Details Process for plasma etching Process for plasma etching

1979-10-29

1982-05-18

Gantz, Delbert E.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, 156643, C23F 102, H05H 124

Patent

active

043303846

ABSTRACT:
Micro-wave plasma etching is carried out with a gas containing at least SF.sub.6 as an etching gas at a high etching rate of silicon, and a high selectivity, with an easy monitoring and a low temperature dependency.

REFERENCES:
patent: 4101411 (1978-07-01), Suzuki et al.
patent: 4138306 (1979-02-01), Niwa
patent: 4175235 (1979-11-01), Niwa et al.
S. Ichimaru, Basic Principles of Plasma Physics, W. A. Benjamin, Inc., Reading, Massachusetts, 1973, Section 7.5A.
Rikagakujiten (Dictionary of Physics and Chemistry), 3rd Ed., 1971 p. 1323.
Y. Horbike and M. Shibagaki, Dry Etching Technology . . . ; Electrochem. Society-Semiconductor Silicon, p. 1071ff, 5/1977.

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