Semiconductor laser with integrated optical elements

Details Semiconductor laser with integrated optical elements Semiconductor laser with integrated optical elements

1987-05-20

1989-03-21

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, 372 50, 350 9612, H01S 319

Patent

active

048150843

ABSTRACT:
Lasers and laser arrays having various optical elements, such as lenses, apertures, prisms, etalons and phase plates, integrated within the resonant optical cavity of the laser. The optical elements are created by introducing a lateral geometric contour in boundaries of refractive index changes thereby causing a change in shape of phase fronts of lightwaves propagating in the laser cavity in a manner analogous to optical elements. Boundaries may be defined between an active region and transparent window regions or may be formed in other layers with which lightwaves interact, such as the layers bounding the active region. Curved boundaries produce convergent or divergent lenses. Absorbing regions may bound window regions to produce apertures for lateral mode control. A periodic step shaped boundary can be used to shift the phase of lightwaves propagating in some laser array waveguides relative to lightwaves in others of the waveguides in order to cause beam emission of a desired supermode. Fresnel lenses, prisms and etalons can also be integrated within the laser.

REFERENCES:
patent: 4367916 (1983-01-01), Mottier et al.
patent: 4445759 (1984-05-01), Valette
Yenezu et al., "High Optical Power Density Emission From A Window Stripe" AlGaAs Double-Heterostructure Laser, Appl. Phys Lett., 34(10), May 15, 1979, pp. 637-638.
Burnham et al., "Traverse Mode Filtering", Xerox Disclosure Journal, vol. 4, No. 3, May/Jun. 1979, p. 367.
Mukai et al., Applied Physics Letters, vol. 47, No. 3, Aug. 1, 1985, pp. 188-190; "Monolithic Integration of a Lens Inside a Diode-Laser Cavity for Beam Convergence".
Salzman et al., Applied Physics Letters, vol. 46, No. 3, Feb. 1, 1985, pp. 218-220; "Unstable Resonator Cavity Semiconductor Lasers".

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