Semiconductor device with programmable fuse

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357 28, 357 59, 357 61, 357 67, H01L 2702

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active

048148539

ABSTRACT:
A first wiring layer is formed on a substrate. An insulation layer is formed on the first wiring layer so as to cover with the first wiring layer. A second wiring layer, which acts as a fuse device, is formed on the insulation layer transverse to the first wiring layer. A programming current is directed through the first wiring layer under the second wiring layer which is to be programmed. The heat generated by the programming current is transmitted through the insulation layer to the portion of the second wiring layer which crosses the first wiring layer. As a result, the second wiring layer is melted by the heat and thus disconnected. Alternatively, the heat may form a eutectic mixture with the material of the second wiring layer and a third wiring layer, which is formed on the second wiring layer, to complete the continuity of the second wiring layer.

REFERENCES:
patent: 3641516 (1972-06-01), Castrucci et al.
patent: 3699395 (1972-10-01), Boleky
patent: 3699403 (1972-10-01), Boleky, III
patent: 3778886 (1973-02-01), Shields et al.
patent: 3792319 (1974-02-01), Tsang
patent: 3971056 (1976-07-01), Jaskolski et al.
patent: 4042950 (1977-08-01), Price
Lloyd et al., "Polysilicon Fuse," IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, p. 3442.
RCA Technical Notes, No. 976, pp. 1 and 2, Sept. 17, 1974, Princeton, N.J.
Patents Abstracts of Japan, vol. 5, No. 66(E-55) [738], May 2, 1981.

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