Quantum well electron barrier diode

Details Quantum well electron barrier diode Quantum well electron barrier diode

1986-03-13

1989-03-21

Edlow, Martin H.

357 3, 357 56, 357 57, 357 16, H01L 2712, H01L 2726, H01L 2906, H01L 29161

Patent

active

048148377

ABSTRACT:
A quantum well electron barrier diode comprising a substrate, a first buffer layer on the substrate, a superlattice structure on the first buffer layer, a second buffer layer on the superlattice structure, a contacting layer on the second buffer layer and first and second ohmic contacts attached to the contacting layer and substrate respectively. The superlattice structure comprises a sequence of a plurality of high energy gap barrier layers interleaved with a plurality of low energy gap wells. The sequence is repeated until the desired thickness is reached. Current flows perpendicular to the layers.

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S. W. Kirchoefer, H. S. Newman, and J. Comas, "Asymmetric Quantum Electron arrier Diode," Applied Physics Letters, 46(9) (May 1985).

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