Total dielectric isolation for integrated circuits

Details Total dielectric isolation for integrated circuits Total dielectric isolation for integrated circuits

1986-02-06

1987-04-28

James, Andrew J.

357 54, 357 34, 357 35, 357 47, H01L 2712

Patent

active

046618325

ABSTRACT:
A fully isolated dielectric structure for isolating regions of monocrystalline silicon from one another and method for making such structure are described. The structure uses a combination of recessed oxide isolation with pairs of parallel, anisotropic etched trenches which are subsequently oxidized and filled to give complete dielectric isolation for regions of monocrystalline silicon. The anisotropic etching preferably etches a buried N+ sublayer under the mnocrystalline silicon region and then the trench structure is thermally oxidized to consume the remaining N+ layer under the monocrystalline region and to fully isolate the monocrystalline silicon region between pairs of such trenches.

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