Coherent light generators – Particular active media – Semiconductor
Patent
1994-04-06
1995-09-05
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 96, H01S 318
Patent
active
054485843
ABSTRACT:
A semiconductor laser with a semiconductor multilayer has at least one double heterostructure. There area pair of cladding layers and an active layer and, where a bandgap energy of the cladding layers is E.sub.1 and that of the active layer is E.sub.2, these bandgap energies satisfy a relation substantially E.sub.1 .gtoreq.2.times.E.sub.2. The semiconductor laser produces green SHG (second harmonic generation) light and the efficiency of producing such light is high because the cladding layers absorb substantially no SHG light.
REFERENCES:
patent: 4803690 (1989-02-01), Takiguchi et al.
patent: 4992837 (1991-02-01), Sukai et al.
patent: 5008891 (1991-04-01), Morita
By T. Furuse et al., "Internal Second Harmonic Generation In InGaAsP DH Lasers", Optics Communications, Dec. 1980, vol. 35, No. 3, pp. 413-416.
By K. Kobayashi et al., "632.7 nm CW Operation (20.degree. C.) of AlGaInP Visible Laser Diodes Fabricated on (001) 6.degree. off toward [110] GaAs Substrate", Japanese Journal of Applied Physics, Sep. 1990, vol. 29, No. 9, pp. 1669-1671.
Bovernick Rodney B.
McNutt Robert
NEC Corporation
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