Ohmic contact electrodes for semiconductor diamonds

Details Ohmic contact electrodes for semiconductor diamonds Ohmic contact electrodes for semiconductor diamonds

1990-07-25

1991-12-24

Hille, Rolf

357 59, 357 2, H01L 2354

Patent

active

050757571

ABSTRACT:
As electrodes for the semiconductor diamond, the p.sup.+ or n.sup.+ polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase is formed on the semiconductor diamond, whereby an ohmic contact electrode with low contact resistance can be made.

REFERENCES:
patent: 4972250 (1990-11-01), Omori et al.
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5002899 (1991-03-01), Geis et al.
Moazed et al, "Ohmic Contacts to Semiconductor Diamond", IEEE Electron Device Letters, vol. 9, No. 7, Jul. 1988.

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