Method for producing lateral bipolar transistor by ion-implantat

Details Method for producing lateral bipolar transistor by ion-implantat Method for producing lateral bipolar transistor by ion-implantat

1978-04-24

1979-09-11

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 34, 357 35, 357 91, H01L 21265, H01L 2126, H01L 2972

Patent

active

041674251

ABSTRACT:
A lateral bipolar transistor has a semiconductor substrate of first conductivity type with an epitaxial layer arranged thereon of second conductivity type. Collector and emitter zones of first conductivity type are laterally arranged in the epitaxial layer. A base terminal contact zone connects with the epitaxial layer and a buried layer of second conductivity type is placed in the epitaxial layer below the emitter and collector zones. The buried layer has a doping concentration higher than the epitaxial layer so that a minority carrier current emanating from the emitter zone in a vertical direction is minimized. A doping profile of the emitter zone and portions of the base adjacent thereto is provided such that an additional potential barrier is created adjacent to and directly beneath the emitter zone in order to further minimize minority charge carriers emanating at a vertical direction from the emitter zone. The doping profile does not create any additional potential barrier in a lateral direction with respect to the emitter zone and the emanation of minority carriers from the emitter zone in a lateral direction is substantially uneffected.

REFERENCES:
patent: 3933528 (1976-01-01), Sloan, Jr.
patent: 3967307 (1976-06-01), Muller et al.
patent: 4045251 (1977-08-01), Graul et al.
Zeidenbergs, "Lateral PNP Transistor - -" IBM-TDB, 14, (1972), 3248.
Cowan et al., "Compatible---PND---Device," IBM-TDB, 13, (1970), 939.

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