Method of making MOS VLSI semiconductor device with metal gate a

Details Method of making MOS VLSI semiconductor device with metal gate a Method of making MOS VLSI semiconductor device with metal gate a

1984-08-07

1987-04-28

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156652, 156656, 156657, 156664, 29571, 427 93, H01L 2128

Patent

active

046613749

ABSTRACT:
Metal-gate transistors with metal silicide cladding of the source/drain regions, as may be used in very high density dynamic RAM devices, are made by a process in which the metal gate is encapsulated in oxide and the cladding is self aligned with the encapsulated gate. A thin coating of a refractory metal is applied to the source/drain areas and heated to react with the exposed silicon. The unreacted metal is removed by an etchant that does not disturb the metal gate or the silicide.

REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4356040 (1982-10-01), Fu et al.
J. S. Chang, "Selective Reactive Ion Etching of Silicon Dioxide", Solid State Technology, Apr. 1984.
Chernicki et al., "Formation of Side Wall Oxide Spacers by Reaction Ion Etching in CHF.sub.3 and O.sub.2 " Extended Abstracts, vol. 83-2, Fall Meeting, The Electrochemical Society.
C. J. Kirches, et al., "Fabricating a Gate Field-Effect Transistor", IBM Tech. Discl. Bul., vol. 13, No. 3, Aug. 1970.

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