Method of processing a semiconductor wafer for controlling drive

Details Method of processing a semiconductor wafer for controlling drive Method of processing a semiconductor wafer for controlling drive

1996-03-29

1999-08-24

Trinh, Michael

Semiconductor device manufacturing: process

With measuring or testing

438 17, 438308, 438197, 148DIG3, 148DIG122, 148DIG137, H01L 2166

Patent

active

059435500

ABSTRACT:
Transistor drive current is controlled by controllably varying light exposure across a semiconductor substrate wafer based on an integrated circuit parameter. Integrated circuit parameters upon which the light exposure is varied include gate oxide thickness, rapid temperature annealing (RTA) temperature, polyetch bias and the like.

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