Method of manufacturing a semiconductor device, in which a silic

Details Method of manufacturing a semiconductor device, in which a silic Method of manufacturing a semiconductor device, in which a silic

1989-07-21

1990-03-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437243, 437244, 437 69, 4272553, 148DIG117, 148DIG118, H01L 21469

Patent

active

049065955

ABSTRACT:
A method of manufacturing a semiconductor device, in which a surface (1) of a silicon wafer (2) is locally provided with an oxidation mask (3), whereupon the wafer is subjected to an oxidation treatment by heating it in an oxidizing gas mixture. According to the invention, the wafer is heated during the treatment in the oxidizing gas mixture to a temperature of 950.degree. to 1050.degree. C. Water is then added to the oxidizing gas mixture. The quantity of added water is initially less than 30% by volume and later larger. Thus, in a comparatively short time a comparatively thick layer of oxide can be formed without defects being formed in silicon lying under the oxide.

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