Insulated-gate semiconductor device

Details Insulated-gate semiconductor device Insulated-gate semiconductor device

1994-06-15

1995-09-05

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

252138, 252137, 252135, 252133, H01L 2136, H01L 2174

Patent

active

054480833

ABSTRACT:
An insulated-gate semiconductor device comprises a P type emitter layer, an N.sup.- high-resistive base layer formed on the P type emitter layer, and a P type base layer contacting the N.sup.- high-resistive base layer. A plurality of trenches are formed having a depth to reach into the N.sup.- high-resistive base layer from the P type base layer. A gate electrode covered with a gate insulation film is buried in each trench. An N type source layer to be connected to a cathode electrode is formed in the surface of the P type base layer in a channel region between some trenches, thereby-forming an N channel MOS transistor for turn-on operation. A P channel MOS transistor connected to the P base layer is formed in a channel region between other trenches so as to discharge the holes outside the device upon turn-off operation.

REFERENCES:
patent: 5329142 (1994-07-01), Kitagawa et al.

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