Long wavelength VCSEL

Details Long wavelength VCSEL Long wavelength VCSEL

1997-04-23

1999-08-24

Bovernick, Rodney

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, 372 46, 257 88, H01S 319

Patent

active

059433590

ABSTRACT:
A VCSEL for emitting long wavelength light including a GaAs (111) substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure including a nitride based quantum well, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.

REFERENCES:
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patent: 5383211 (1995-01-01), Van de Walle et al.
patent: 5432809 (1995-07-01), Grodzinski et al.
patent: 5642376 (1997-06-01), Olbright et al.
patent: 5708280 (1998-01-01), Lebby et al.
patent: 5719895 (1998-02-01), Jewell et al.
T. Miyamoto et al. "Design and Expected Characteristics of 1.2 mum GalnNas/GaAs Vertical Cavity Surface Emitting Lasers" Quantum Optoelectronics 1997, Technical Digest Series, Postconference Edition, vol. 9, Mar. 19-21, 1997, pp. 126-128.
M. Kondow et al. "A Novel Material of GalnNAs for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance" International Conference on Solid State Devices and Materials, Aug. 21, 1995, pp. 1016-1018.

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