Photodetector device

Details Photodetector device Photodetector device

1989-12-28

1991-12-24

Hille, Rolf

357 24, H01L 2714

Patent

active

050757482

ABSTRACT:
A rear surface incident type photodetector device includes spaced apart light absorption regions on a semi-insulating substrate, a semi-insulating layer covering the light absorption regions on the semi-insulating substrate, a first conductivity type semiconductor region disposed on the semi-insulating layer opposite each light absorption regon, and second conductivity type semiconductor regions separating the first conductivity type regions and reaching the semi-insulating layer. A rear surface incident type photodetector device includes spaced apart insulating light absorption regions on a surface of a semi-insulating substrate, first conductivity type semiconductor regions covering the insulating light absorption, regions, and second conductivity type semiconductor regions separating the first conductivity type semiconductor regions and reaching the semi-insulating substrate.

REFERENCES:
patent: 4198646 (1980-04-01), Alexander et al.
patent: 4801991 (1989-01-01), Hisa
patent: 4951106 (1990-08-01), Blouke
Baker et al., "Photovoltaic CdHgTe . . . Planes", SPIE, vol. 510, Infrared Technology X (1984) pp. 121-129.
Williams et al., "Multilayers of HgTe-Cd-Te . . . Vapor Deposition", Journal of Applied Physics 62(1), Jul. 1987, pp. 295-297.

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