Coherent light generators – Particular active media – Semiconductor
Patent
1997-06-05
1999-08-24
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
257 79, 257632, 438 32, H01S 319, H01L 2715, H01L 2358, H01L 2120
Patent
active
059433566
ABSTRACT:
In a semiconductor laser, a first dielectric layer is formed on the front face of a laser diode for producing a compressive stress, and a second dielectric layer is formed on the first dielectric layer for producing a tensile stress for counteracting the compressive stress of the first dielectric layer. The first dielectric layer is formed of a substance such as Al.sub.2 O.sub.3 and the second dielectric layer is formed of a substance such as SiN.sub.x. A high stability into is created between the first dielectric layer and the front face of the laser diode to prevent it from suffering from a castrophic optical damage.
REFERENCES:
patent: 5418799 (1995-05-01), Tada
patent: 5440575 (1995-08-01), Chand et al.
patent: 5729567 (1998-03-01), Nakagawa
English translation of Japanese patent JP-02-162788 (inventor: Hiranaka et al), Jun. 22, 1990.
English Translation of Japanese Patent Abstract (acession No. 90-162788, patent No. 02-162788), Jun. 1990.
Japanese Office Action dated Mar. 17, 1998 with English language translation of Japanese Examiner's comments.
Bovernick Rodney
Leung Quyen Phan
NEC Corporation
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