Method for enhancing the crystallization rate of high purity amo

Details Method for enhancing the crystallization rate of high purity amo Method for enhancing the crystallization rate of high purity amo

1978-09-18

1980-06-17

McCarthy, Helen M.

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

106 735, 423344, C04B 3558

Patent

active

042082153

ABSTRACT:
High purity, fine Si.sub.3 N.sub.4 powder produced by the vapor phase reaction of SiCl.sub.4 with NH.sub.3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si.sub.3 N.sub.4 by the simultaneous reaction of TiCl.sub.4 with NH.sub.3.

REFERENCES:
patent: 3110589 (1963-11-01), Bechtold
patent: 3959446 (1976-05-01), Mazdiyasni et al.
patent: 3992497 (1976-11-01), Terwilliger et al.
patent: 4145224 (1979-03-01), Kleiner et al.
Deeley, G. G. et al., "Dense Silicon Nitride", Powd. Met. 8 (1961), pp. 145-151.

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