Static information storage and retrieval – Powering
Patent
1998-05-15
1999-08-24
Nguyen, Viet Q.
Static information storage and retrieval
Powering
365204, 365 96, G11C 11404
Patent
active
059432829
ABSTRACT:
A NAND EEPROM is disclosed which is capable of variously setting, for each chip, the voltage to be applied to the control gates of memory cells. The semiconductor chip includes a NAND memory cell array and a high-voltage generating circuit for generating data writing internal voltage VPP required when data is written on the memory cell array. Moreover, the semiconductor chip includes a set voltage selection circuit for arbitrarily setting the level of the voltage VPP generated by the high-voltage generating circuit for each chip and a multiplexer for extracting, to the outside of the chip, setting signal LTF which is a signal for enabling the level of the voltage VPP set arbitrarily.
REFERENCES:
patent: 5153452 (1992-10-01), Iwamura et al.
patent: 5428299 (1995-06-01), Koshikawa
patent: 5519654 (1996-05-01), Kato et al.
Iwata Yoshihisa
Oodaira Hideko
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
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