Gate controlled semiconductor device

Details Gate controlled semiconductor device Gate controlled semiconductor device

1977-03-15

1978-05-30

Miller, Jr., Stanley D.

357 20, 357 51, 357 68, 357 86, H01L 2974

Patent

active

040927032

ABSTRACT:
A gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. The semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair of P-type diffusion regions and N-type diffusion regions, a plurality of cathode assemblies including a metallic layer deposited on a cathode-emitter layer formed on a surface of said semiconductive element, an anode electrode assembly and gate electrode assemblies. The latter includes a plurality of separated metallic layers provided around the cathode electrode assemblies of the cathode-emitter layer. The cathode electrode assemblies are of a radial and spiral shape and the divided gate electrode assemblies have also a ring shape and/or circular shape.

REFERENCES:
patent: 3489962 (1970-01-01), McIntyre et al.
patent: 3586927 (1971-06-01), Roach et al.
patent: 3609476 (1971-09-01), Storm
patent: 3968512 (1976-07-01), Voss
E. Wolley et al., "Characteristics of a 200 AMP Gate Turn-Off Thyristor," IEEE Conf. Record of 1973 Meeting, 73 CHO763-31A, Oct. 8, 1973, pp. 251-255.
H. Storm et al., "An Involute Gate-Emitter Configuration for Thyristors and Transistors," 1973 Int. Elect. Dev. Meeting Tech. Digest, Wash., D.C., Dec. 3, 1973, pp. 113-115.

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