Semiconductor device

Details Semiconductor device Semiconductor device

1974-08-05

1978-05-30

Larkins, William D.

357 20, 357 38, H01L 2906, H01L 2974

Patent

active

040926630

ABSTRACT:
An improved semiconductor device with a high blocking capability of the t having a semiconductor wafer with at least two layer type zones of alternatingly opposite conductivity type and different doping concentrations which form a pn junction therebetween which intersects the edge surface of the semiconductor wafer, the higher doped of the at least two zones forming the pn junction being an outer zone of said semiconductor wafer and extending along one of the major surfaces thereof, the edge surface of the semiconductor wafer enclosing, in its path from the higher doped zone to the adjacent lower doped zone, an angle of less than 90.degree. with the surface of the pn junction, and a contact on each of the opposed parallel major surfaces of the wafer. According to the invention, the edge surface of the semiconductor wafer is substantially perpendicular to said major surface of the semiconductor wafer; a recess is formed in said major surface at a predetermined distance from the edge surface and within the higher doped layer, with the edge portion of the recess enclosing an angle equal to or greater than 90.degree. with the region of said major surface disposed between the recess and the edge surface; and the pn junction adjacent the recess extends parallel to the recess.

REFERENCES:
patent: 3370209 (1968-02-01), Davis et al.
patent: 3437886 (1969-04-01), Edqvist et al.
patent: 3458781 (1969-07-01), Simon
patent: 3611554 (1971-10-01), Garrett
patent: 3697829 (1972-10-01), Huth et al.

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