Method for determining a reliable oxide thickness

Details Method for determining a reliable oxide thickness Method for determining a reliable oxide thickness

1998-09-30

2000-10-17

Brown, Glenn W.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324766, 438 14, G01N 2792, G01R 3112, H01L 2166

Patent

active

061337463

ABSTRACT:
A method for determining a reliable gate oxide thickness for a transistor involves subjecting test transistors to an alternating current (AC) voltage until the test transistors break down. The breakdown times of the test transistors are measured and correlated with the corresponding gate oxide thickness of the test transistor to form a reliability model of the transistor. The reliable gate oxide thickness is determined by extrapolating the reliability model out to a predetermined period of time for which reliability is desired, for example, ten years.

REFERENCES:
patent: 5548224 (1996-08-01), Gabriel et al.
patent: 5650336 (1997-07-01), Eriguchi et al.
patent: 5793212 (1998-08-01), Om
patent: 5801538 (1998-09-01), Kwon

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