Method of preparing polycrystalline silicon film

Details Method of preparing polycrystalline silicon film Method of preparing polycrystalline silicon film

1993-09-08

1995-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, 437109, H01L 21469

Patent

active

054478898

ABSTRACT:
Disclosed herein is a method of preparing a polycrystalline silicon film comprising a step of forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and a step of heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film.

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Wolf et al, Silicon Processing for the VLSI era. vol. 1-Processing Technology, p. 179, copyright .COPYRGT. 1986 by Lattice Press.

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