Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-10-27

1995-09-05

Le, Hoa Van

Fishing, trapping, and vermin destroying

437 67, 437 68, 437 72, 437 78, 437 79, 427228, H01L 2176

Patent

active

054478839

ABSTRACT:
A p.sup.+ -diffusion layer is formed on a surface of a p-type silicon substrate in self-alignment with a groove 7 defined in the p-type silicon substrate, and a thin insulating film is formed on the groove and the p.sup.+ -diffusion layer in self-alignment therewith, the thick insulating film having side walls. A self-aligned n.sup.+ -diffusion layer has terminal edges spaced from terminal edges of the p.sup.+ -diffusion layer for minimizing any leakage current flowing between these terminal edges.

REFERENCES:
patent: 5108946 (1992-04-01), Zdebel et al.
patent: 5116779 (1992-05-01), Iguchi
patent: 5190889 (1993-03-01), Poon et al.

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