Method of manufacturing nonvolatile semiconductor memory device

Details Method of manufacturing nonvolatile semiconductor memory device Method of manufacturing nonvolatile semiconductor memory device

1993-10-08

1995-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, 437984, H01L 21266, H01L 218247

Patent

active

054478774

ABSTRACT:
A plurality of memory cells are formed on a semiconductor substrate. Each memory cell contains a first gate insulating film formed on the semiconductor substrate, a floating gate formed on the first gate insulating film, a second gate insulating film formed on the floating gate, a control gate formed on the second gate insulating film, and a source and a drain region formed in the semiconductor substrate on both sides of the floating gate, respectively. The source regions of the memory cells are connected with a plurality of common source lines. At least the surface of these source regions in the vicinity of the ends of the floating gate are made flush with the surface of the semiconductor substrate under the floating gate.

REFERENCES:
patent: 5240870 (1993-08-01), Bergemont
patent: 5246874 (1993-09-01), Bergemont
patent: 5268318 (1993-12-01), Harari
patent: 5279982 (1994-01-01), Crotti
patent: 5284784 (1994-02-01), Manley
patent: 5290721 (1994-03-01), Yoshimi et al.

Affiliated with

Also associated with

Rating

Method of manufacturing nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-472473